參數(shù)資料
型號(hào)： BS0604NS2Q6740-S4175
元件分類： MOSFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 100K
代理商： BS0604NS2Q6740-S4175
2000-10-06
Page 2
Preliminary data
BSO604NS2
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
R
thJS
R
thJA
-
-
-
-
-
-
50
100
62.5
K/W
@ min. footprint ; t
≤
=
10 s
@ 6 cm
2
cooling area
1)
; t
≤
10 s
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
typ.
Unit
min.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=30μA
Zero gate voltage drain current
V
(BR)DSS
55
-
-
V
V
GS(th)
1.2
1.6
2
V
DS
=55V,
V
GS
=0V,
T
j
=25°C
V
DS
=55V,
V
GS
=0V,
T
j
=150°C
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
1
100
nA
V
GS
=4.5V,
I
D
=2.6A
Drain-source on-state resistance
R
DS(on)
-
34
44
m
V
GS
=10V,
I
D
=2.6A
R
DS(on)
-
27
35
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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