參數(shù)資料
型號: BS170/E7
廠商: VISHAY SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
封裝: PLASTIC, TO-92, 3 PIN
文件頁數(shù): 1/5頁
文件大?。?/td> 209K
代理商: BS170/E7
BS170
Vishay Semiconductors
formerly General Semiconductor
Document Number 88179
www.vishay.com
10-May-02
1
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDSS
60
V
Drain-Gate Voltage
VDGS
60
V
Gate-Source-Voltage (pulsed)
VGS
± 20
V
Drain Current (continuous)
ID
300
mA
Power Dissipation at Tamb = 25°CPtot
0.83(1)
W
Thermal Resistance Junction to Ambient Air
R
θJA
150(1)
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–65 to +150
°C
Note:
(1) Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
Features
High input impedance
High-speed switching
No minority carrier storage time
CMOS logic compatible input
No thermal runaway
No secondary breakdown
On special request, this transistor is also
manufactured in the pin configuration TO-18.
Mechanical Data
Case: TO-92 Plastic Package
Weight: approx. 0.18g
Packaging Codes/Options:
E6/Bulk- 5K per container, 20K/box
E7/4K per Ammo tape, 20K/box
TO-226AA (TO-92)
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
Dimensions in inches
and (millimeters)
DMOS Transistor (N-Channel)
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