型號: | BS170/E7 |
廠商: | VISHAY SEMICONDUCTORS |
元件分類: | 小信號晶體管 |
英文描述: | 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA |
封裝: | PLASTIC, TO-92, 3 PIN |
文件頁數(shù): | 1/5頁 |
文件大?。?/td> | 209K |
代理商: | BS170/E7 |
相關(guān)PDF資料 |
PDF描述 |
---|---|
BS515-I | 1-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE |
BS616LV1611FIP55 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
BS616LV1611FIP70 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
BS616LV1613 | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
BS616LV1613FC | Very Low Power/Voltage CMOS SRAM 1M X 16 bit |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
BS170F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N, SOT-23 制造商:Diodes Incorporated 功能描述:MOSFET, N CH, 60V, 150mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:150mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; No. of Pins:3 ;RoHS Compliant: Yes |
BS170F | 制造商:Diodes Incorporated 功能描述:MOSFET N SOT-23 |
BS170FTA | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
BS170FTA-CUT TAPE | 制造商:DIODES 功能描述:BS170 Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23 |
BS170FTC | 功能描述:MOSFET N-Chnl 60V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |