參數(shù)資料
型號(hào)： BS170/E7
廠商： VISHAY SEMICONDUCTORS
元件分類： 小信號(hào)晶體管
英文描述： 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AA
封裝： PLASTIC, TO-92, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 209K
代理商： BS170/E7
BS170
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88179
2
10-May-02
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
V(BR)DSS
ID = 100
A, VGS = 0
60
80
—
V
Gate-Source Threshold Voltage
VGS(th)
VGS = VDS, ID = 1mA
1.0
2
3.0
V
Gate-Body Leakage Current
IGSS
VGS = 15V, VDS = 0
——
10
nA
Drain Cutoff Current
IDSS
VDS = 25V, VGS = 0
——
0.5
A
Drain-Source ON Resistance
RDS(on)
VGS = 10V, ID = 0.2A
—
3.5
5.0
Forward Transconductance
gm
VDS = 10V, ID = 0.2A
—
200
—
mS
f = 1MHz
Input Capacitance
Ciss
VDS = 10V, VGS = 0,
—
30
—
pF
f = 1MHz
Turn-On Time
ton
VGS = 10V, VDS = 10V
—
5
—
ns
Turn-Off Time
toff
RD = 100
—
15
—
ns
Inverse Diode
Parameters
Symbol
Test Condition
Value
Unit
Maximum Forward Current (continuous)
IF
Tamb = 25 °C
0.5
A
Forward Voltage Drop (typ.)
VF
VGS = 0, IF = 0.5 A
0.85
V
Tj = 25°C
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參數(shù)描述
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BS170FTA-CUT TAPE 制造商:DIODES 功能描述:BS170 Series 60 V 5 Ohm N-Channel Enhancement Mode Vertical DMOS FET- SOT-23
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