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參數(shù)資料
| 型號： | BSH301 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Dual N-channel enhancement mode MOS transistor |
| 中文描述： | 5000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 36K |
| 代理商： | BSH301 |
1999 Apr 06
2
Philips Semiconductors
Objective specification
Dual N-channel enhancement mode MOS transistor
BSH301
FEATURES
40 m
on-state resistance at 2.5 V gate drive
R
DSon
rating down to 1.8 V
ESD gate protection.
APPLICATIONS
Li-Ion safety switch
Power management.
DESCRIPTION
Two N-channel enhancement mode MOS transistors in an
8-pin plastic TSSOP8 package.
PINNING SOT530 (TSSOP8)
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
6
7
8
d1
s1
s1
g1
g2
s2
s2
d1
drain 1
source 1
source 1
gate 1
gate 2
source 2
source 2
drain 1
CAUTION
The device is supplied in an antistatic package. The gate
inputs must be protected against static discharge during
transport or handling.
Fig.1 Simplified outline (SOT530) and symbol.
handbook, halfpage
MAM423
1
4
5
d1s2s2
g2
d1s1s1
g1
QUICK REFERENCE DATA
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
T
S
is the temperature at the soldering of the drain lead.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
SD
V
GS
V
GSth
I
D
R
DSon
P
tot
drain-source voltage (DC)
source-drain diode forward voltage
gate-source voltage (DC)
gate-source threshold voltage
drain current (DC)
drain-source on-state resistance
total power dissipation
0.4
20
1
±
8
5
0.04
1.75
V
V
V
V
A
W
V
GD
= 0; I
S
= 1.25 A
V
DS
= V
GS
; I
D
= 1 mA
T
S
= 80
°
C; note 1
V
GS
= 2.5 V; I
D
= 3.5 A
T
S
= 80
°
C
Full Data Sheet will appear: on WWW (Internet; details in front section/back of this HB/CD-ROM) or updated Loose leaf
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