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參數(shù)資料
| 型號(hào)： | BSN304 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistors |
| 中文描述： | 300 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 88K |
| 代理商： | BSN304 |
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL RESISTANCE
Note
1.
Device mounted on an epoxy printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead
minimum 10 mm x 10 mm.
STATIC CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
DS
±
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
peak drain current
total power dissipation
storage temperature
operating junction temperature
300
20
250
1
1
+150
150
V
V
mA
A
W
°
C
°
C
open drain
up to T
amb
= 25
°
C; note 1
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-a
from junction to ambient; note 1
125 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
6.7
7.9
380
57
MAX. UNIT
100
2
8
14
100
90
V
(BR)DSS
±
I
GSS
V
GS(th)
R
DS(on)
drain-source breakdown voltage
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
I
D
= 10
μ
A; V
GS
= 0
±
V
GS
= 20 V; V
DS
= 0
I
D
= 1 mA; V
DS
= V
GS
I
D
= 250 mA; V
GS
= 10 V
I
D
= 20 mA; V
GS
= 2.4 V
V
DS
= 240 V; V
GS
= 0
I
D
= 250 mA; V
DS
= 25 V
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
V
DS
= 25 V; V
GS
= 0;
f = 1 MHz
300
0.8
200
V
nA
V
nA
mS
pF
I
DSS
Y
fs
C
iss
drain-source leakage current
transfer admittance
input capacitance
C
oss
output capacitance
15
30
pF
C
rss
feedback capacitance
2.6
15
pF
Switching times (see Figs
2
and
3
)
t
on
turn-on time
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 10 to 0 V
2.5
10
ns
t
off
turn-off time
17
30
ns
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|---|---|
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| BSP254AAMO | TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 200MA I(D) | TO-92VAR |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BS-N-304 | 制造商:MOLEX 制造商全稱:Molex Electronics Ltd. 功能描述:NylaKrimp? Parallel Splice for 14-16 AWG Wire |
| BSN304 AMO | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSN304,126 | 功能描述:MOSFET AMMORA MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BSN304A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistors |
| BSN304AT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 250MA I(D) | TO-92VAR |
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