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參數(shù)資料
| 型號： | BSN304A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | INDUCTOR HI CURRENT RADIAL 120UH |
| 中文描述： | 250 mA, 300 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 88K |
| 代理商： | BSN304A |
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistors
BSN304; BSN304A
Fig.12 Temperature coefficient of
drain-source on-resistance.
k
R
DS on
at T
)
C
----------------------------------------------
.
=
Typical R
DS(on)
;
(1) I
D
= 250 mA; V
GS
= 10 V.
(2) I
D
= 20 mA; V
GS
= 2.4 V.
handbook, halfpage
50
0
(1)
(2)
50
k
Tj (
°
C)
150
0
2
100
1.5
1
0.5
MRC235
Fig.13 Temperature coefficient of gate-source
threshold voltage.
k
V
GS th
(
)
C
at T
j
(
--------------------------------------------
.
=
handbook, halfpage
50
0
50
k
Tj (
°
C)
150
0
1
100
0.75
0.5
0.25
MRC236
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