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參數(shù)資料
| 型號： | BSP20 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | INNOLINE: RP100-S_DI - Single Output up to 25A Dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- Under-Voltage Lockout- No Minimum Load- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 1 |
| 中文描述： | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 42K |
| 代理商： | BSP20 |
1999 Jun 01
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
FEATURES
Low current (max. 100 mA)
High voltage (max. 350 V).
APPLICATIONS
Switching and amplification
Especially used in telephony and automotive
applications.
DESCRIPTION
NPN transistor in a SOT223 plastic package.
PNP complement: BSP16.
PINNING
PIN
DESCRIPTION
1
base
collector
emitter
2, 4
3
Fig.1 Simplified outline (SOT223) and symbol.
handbook, halfpage
4
1
2
3
MAM287
Top view
3
2, 4
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BSP19
BSP20
collector-emitter voltage
BSP19
BSP20
emitter-base voltage
collector current (DC)
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
400
300
V
V
V
CEO
open base
65
65
350
250
5
100
100
1.2
+150
150
+150
V
V
V
mA
mA
W
°
C
°
C
°
C
V
EBO
I
C
I
B
P
tot
T
stg
T
j
T
amb
open collector
T
amb
≤
25
°
C; note 1
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