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參數(shù)資料
| 型號(hào)： | BSP20 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | INNOLINE: RP100-S_DI - Single Output up to 25A Dual Outputs Total Power up to 100W- Input/Output 1.6kVDC Isolation- Adjustable Output Voltage- Under-Voltage Lockout- No Minimum Load- Industry Standard Footprint- Fixed Operating Frequency- Halt Tested- Compact 61.0 x 57.91 x 1 |
| 中文描述： | 1 A, 250 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 42K |
| 代理商： | BSP20 |
1999 Jun 01
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
BSP19; BSP20
THERMAL CHARACTERISTICS
Note
1.
Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
23
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
CBO
I
EBO
h
FE
V
CEsat
C
c
f
T
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
collector capacitance
transition frequency
I
E
= 0; V
CE
= 300 V
I
C
= 0; V
EB
= 5 V
V
CE
= 10 V; I
C
= 20 mA
I
C
= 50 mA; I
B
= 4 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
V
CE
= 10 V; I
C
= 10 mA; f = 100 MHz
40
70
20
100
0.5
2.5
nA
nA
V
pF
MHz
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