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參數(shù)資料
| 型號： | BST76 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | N溝道增強型垂直D-MOS晶體管 |
| 文件頁數(shù)： | 3/12頁 |
| 文件大小： | 78K |
| 代理商： | BST76 |
1997 Jun 20
3
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST76A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Device mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for drain lead minimum
10 mm
×
10 mm.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
DS(SM)
V
GSO
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage (DC)
drain-source voltage
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
65
180
200
±
20
300
800
1
+150
150
V
V
V
mA
mA
W
°
C
°
C
non-repetitive peak; t
p
≤
2 mS
open drain
T
amb
≤
25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
125
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
7
6
250
50
20
6
MAX.
2.4
10
±
100
10
65
30
10
UNIT
V
(BR)DSS
V
GSth
I
DSS
I
GSS
R
DSon
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
drain-source on-state resistance
V
GS
= 0; I
D
= 100
μ
A
V
DS
= V
GS
; I
D
= 100
μ
A
V
DS
= 120 V; V
GS
= 0
V
DS
= 0; V
GS
=
±
20 V
V
GS
= 3 V; I
D
= 15 mA
V
GS
= 10 V; I
D
= 300 mA
I
D
= 300 mA; V
DS
= 15 V
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
V
DS
= 10 V; V
GS
= 0; f = 1 MHz
180
0.7
V
V
μ
A
nA
mS
pF
pF
pF
y
fs
C
iss
C
oss
C
rss
forward transfer admittance
input capacitance
output capacitance
reverse transfer capacitance
Switching times
(see Figs 2 and 3)
t
on
turn-on time
V
GS
= 0 to 10 V; V
DS
= 50 V;
I
D
= 300 mA
V
GS
= 10 to 0 V; V
DS
= 50 V;
I
D
= 300 mA
10
ns
t
off
turn-off time
15
ns
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