參數(shù)資料
型號： BT168GW
廠商： NXP Semiconductors N.V.
元件分類： 參考電壓二極管
英文描述： Logic level thyristor
中文描述： 邏輯電平可控硅
封裝： BT168GW<SOT223 (SC-73)|<<http://www.nxp.com/packages/SOT223.html<1<week 35, 2003,;
文件頁數(shù)： 5/12頁
文件大小： 128K
代理商： BT168GW
BT168GW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 21 October 2011
5 of 12
NXP Semiconductors
BT168GW
Thyristors; logic level for RCD/GFI/LCCB applications
6. Characteristics
Table 5.
T
j
= 25
C; unless otherwise stated
Symbol
Parameter
Static characteristics
I
GT
gate trigger current
Characteristics
Conditions
Min
Typ
Max
Unit
V
D
= 12 V; I
T
= 10 mA; gate open circuit;
see
Figure 8
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
;
see
Figure 10
V
D
= 12 V; I
GT
= 0.5 mA; R
GK
= 1 k
; see
Figure 11
I
T
= 1.2 A
I
T
= 10 mA; gate open circuit; see
Figure 7
V
D
= 12 V
V
D
= V
DRM(max)
; T
j
= 125
C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125
C;
R
GK
= 1 k
20
50
200
A
I
L
latching current
-
2
6
mA
I
H
holding current
-
2
5
mA
V
T
V
GT
on-state voltage
gate trigger voltage
-
1.25
1.7
V
-
0.2
-
0.5
0.3
0.05
0.8
-
0.1
V
V
mA
I
D
, I
R
off-state leakage current
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
DM
= 67 % V
DRM(max)
; T
j
= 125
C; exponential
waveform; see
Figure 12
R
GK
= 1 k
gate open circuit
I
TM
= 2 A; V
D
= V
DRM(max)
; I
G
= 10 mA;
dI
G
/dt = 0.1 A/
s
V
D
= 67% V
DRM(max)
; T
j
= 125
C; I
TM
= 1.6 A;
V
R
= 35 V; dI
TM
/dt = 30 A/
s; dV
D
/dt = 2 V/
s;
R
GK
= 1 k
500
-
-
800
25
2
-
-
-
V/
s
V/
s
s
t
gt
gate controlled turn-on
time
circuit commuted turn-off
time
t
q
-
100
-
s
Fig 7.
Normalized gate trigger voltage as a function
of junction temperature
Fig 8.
Normalized gate trigger current as a function
of junction temperature
T
j
(
°
C)
50
150
100
0
50
001aab501
0.8
1.2
1.6
0.4
V
GT
V
GT(25
°
C)
T
j
(
°
C)
50
150
100
0
50
001aab502
1
2
3
0
I
GT
I
GT(25
°
C)
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BT168GWF 制造商:NXP Semiconductors 功能描述:THYRISTOR600VSOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223 制造商:NXP Semiconductors 功能描述:THYRISTOR,600V,SOT223; Peak Repetitive Off-State Voltage, Vdrm:600V; Gate Trigger Current Max, Igt:200A; Current It av:630mA; On State RMS Current IT(rms):1A; Peak Non Rep Surge Current Itsm 50Hz:8A; Holding Current Max Ih:10mA; ;RoHS Compliant: Yes
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