參數(shù)資料
型號(hào): BT169D-L
廠商: NXP Semiconductors N.V.
元件分類(lèi): 參考電壓二極管
英文描述: SCR
封裝: BT169D-L<SOT54 (SOT54)|<<http://www.nxp.com/packages/SOT54.html<1<Always Pb-free,;BT169D-L<SOT54 (SOT54)|<<http://www.nxp.com/packages/SOT54.html<1<Always Pb-free,;
文件頁(yè)數(shù): 1/12頁(yè)
文件大小: 222K
代理商: BT169D-L
1.
Product profile
1.1 General description
Planar passivated very sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92)
plastic package.
1.2 Features and benefits
Planar passivated for voltage
ruggedness and reliability
Very sensitive gate
1.3 Applications
Ignition circuits
Low power latching circuits
Protection / shut-down circuits: lighting
ballasts
Protection / shut-down circuits:
Switched Mode Power Supplies
1.4 Quick reference data
BT169D-L
SCR
Rev. 5 — 10 November 2011
Product data sheet
T-2
Table 1.
Symbol
V
DRM
Quick reference data
Parameter
repetitive peak off-state
voltage
repetitive peak reverse
voltage
non-repetitive peak on-state
current
RMS on-state current
Conditions
Min
-
Typ
-
Max
400
Unit
V
V
RRM
-
-
400
V
I
TSM
half sine wave; T
j(init)
= 25 °C;
t
p
= 10 ms; see
Figure 4
; see
Figure 5
half sine wave; T
lead
83 °C;
see
Figure 1
; see
Figure 2
-
-
8
A
I
T(RMS)
-
-
0.8
A
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
see
Figure 7
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
see
Figure 8
-
-
50
μA
I
H
I
L
holding current
latching current
-
-
0.4
2
1
4
mA
mA
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