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參數(shù)資料
| 型號： | BT169D-L |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | SCR |
| 封裝： | BT169D-L<SOT54 (SOT54)|<<http://www.nxp.com/packages/SOT54.html<1<Always Pb-free,;BT169D-L<SOT54 (SOT54)|<<http://www.nxp.com/packages/SOT54.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 222K |
| 代理商： | BT169D-L |
BT169D-L
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 10 November 2011
6 of 12
NXP Semiconductors
BT169D-L
SCR
6.
Characteristics
Table 6.
Symbol
Static characteristics
I
GT
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
gate trigger current
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
see
Figure 7
V
D
= 12 V; I
G
= 0.5 mA; T
j
= 25 °C;
see
Figure 8
V
D
= 12 V; T
j
= 25 °C; see
Figure 9
I
T
= 1.2 A; T
j
= 25 °C; see
Figure 10
V
D
= 12 V; I
T
= 10 mA; T
j
= 25 °C;
see
Figure 11
V
D
= 12 V; I
T
= 10 mA; T
j
= 125 °C;
see
Figure 11
V
D
= 400 V; T
j
= 125 °C; R
GK
= 1 k
V
D
= 400 V; T
j
= 25 °C; R
GK
= 1 k
T
j
= 125 °C; R
GK
= 1 k
; V
R
= 400 V
T
j
= 25 °C; R
GK
= 1 k
; V
R
= 400 V
-
-
50
μA
I
L
latching current
-
2
4
mA
I
H
V
T
V
GT
holding current
on-state voltage
gate trigger voltage
-
-
-
0.4
1.25
0.5
1
1.7
0.8
mA
V
V
0.2
0.3
-
V
I
D
off-state current
-
-
-
-
0.05
-
0.05
-
0.1
2
0.1
2
mA
μA
mA
μA
I
R
reverse current
Dynamic characteristics
dV
D
/dt
rate of rise of off-state voltage V
DM
= 268 V; T
j
= 125 °C; R
GK
= 1 k
;
exponential waveform; see
Figure 12
V
DM
= 268 V; T
j
= 125 °C; exponential
waveform; gate open circuit;
see
Figure 12
500
800
-
V/s
-
25
-
V/μs
Fig 7.
Normalized gate trigger current as a function of
junction temperature
Fig 8.
Normalized latching current as a function of
junction temperature
T
j
(
°
C)
50
150
100
0
50
001aab502
1
2
3
0
I
GT
I
GT(25
°
C)
T
j
(°C)
-50
150
100
0
50
003aag891
1
2
3
0
I
L(Tj)
I
L(25
°
C)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BT169D-L,112 | 功能描述:雙向可控硅 Thyristor SCR 400V 9A Bulk RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BT169D-L,116 | 功能描述:整流器 Silicon Controlled Rectifier RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| BT169D-L_08 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Thyristor logic level |
| BT169DL-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
| BT169DL-T92-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:SCRS |
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