- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378421 > BTA2008W-600D (NXP SEMICONDUCTORS) 3Q Hi-Com Triac PDF資料下載
參數(shù)資料
| 型號： | BTA2008W-600D |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | 3Q Hi-Com Triac |
| 中文描述： | 4 QUADRANT LOGIC LEVEL TRIAC |
| 封裝： | PLASTIC PACKAGE-4 |
| 文件頁數(shù)： | 3/16頁 |
| 文件大小： | 490K |
| 代理商： | BTA2008W-600D |
BTA2008W-600D
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 7 July 2011
3 of 16
NXP Semiconductors
BTA2008W-600D
3Q Hi-Com Triac
4.
Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Limiting values
Symbol
V
DRM
I
T(RMS)
Parameter
repetitive peak off-state voltage
RMS on-state current
Conditions
Min
-
-
Max
600
0.8
Unit
V
A
full sine wave; T
sp
≤
108 °C; see
Figure 3
;
see
Figure 1
; see
Figure 2
full sine wave; T
j(init)
= 25 °C; t
p
= 20 ms;
see
Figure 4
; see
Figure 5
full sine wave; T
j(init)
= 25 °C; t
p
= 16.7 ms
t
p
= 10 ms; sine-wave pulse
I
T
= 1.5 A; I
G
= 20 mA; dI
G
/dt = 0.2 A/μs
I
TSM
non-repetitive peak on-state
current
-
9
A
-
-
-
-
-
-
-40
-
9.9
0.41
100
2
5
0.1
150
125
A
A
2
s
A/μs
A
W
W
°C
°C
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20ms period
Fig 1.
RMS on-state current as a function of surge
duration; maximum values
Fig 2.
RMS on-state current as a function of lead
temperature; maximum values
003aag395
2
4
6
I
T(RMS)
(A)
0
10
-2
surge duration (s)
10
1
10
-1
T
sp
(°C)
-50
150
100
0
50
003aag396
0.4
0.6
0.2
0.8
1
I
T(RMS)
(A)
0
108 °C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BTA201-600B | 3Q Hi-Com Triac |
| BTA201-600E | 3Q Hi-Com Triac |
| BTA201-800B | 3Q Hi-Com Triac |
| BTA201-800E | 3Q Hi-Com Triac |
| BTA201-800ER | 3Q Hi-Com Triac |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTA2008W-600D,135 | 功能描述:雙向可控硅 3 QUADRANT TRIACS RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復(fù)通態(tài)電流:120 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）:5 uA 開啟狀態(tài)電壓: 保持電流（Ih 最大值）:45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220AB |
| BTA2008W-600D+135 | 制造商:NXP Semiconductors 功能描述:Cut Tape |
| BTA2008W-600D135 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BTA2008W-800D,135 | 制造商:NXP Semiconductors 功能描述:BTA2008W-800D/SC-73/REELLG// - Tape and Reel 制造商:NXP Semiconductors 功能描述:TRIAC 800V 0.8A SC-73 |
| BTA201 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:1 A Three-quadrant triacs high commutation |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。