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參數(shù)資料
| 型號： | BTA204X-800E,127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 晶閘管 |
| 英文描述： | Three quadrant triacs guaranteed commutation - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: SOT186A (TO-220F); Container: Horizontal, Rail Pack |
| 中文描述： | 800 V, 4 A, TRIAC |
| 文件頁數(shù)： | 10/12頁 |
| 文件大小： | 75K |
| 代理商： | BTA204X-800E,127 |
9397 750 14491
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 04 — 17 March 2005
7 of 12
Philips Semiconductors
BTA204X series D, E and F
Three quadrant triacs guaranteed commutation
8.
Dynamic characteristics
Table 7:
Dynamic characteristics
Symbol Parameter
Conditions
BTA204X-600D
BTA204X-600E
BTA204X-600F
Unit
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
dVD/dt
critical rate of
rise of off-state
voltage
VDM =67%
VDRM(max);
Tj = 125 °C;
exponential
waveform; gate
open circuit
20
-
30
-
50
-
V/
s
dIcom/dt
critical rate of
change of
commutating
current
VDM = 400 V;
Tj = 125 °C;
IT(RMS) = 4 A;
dVcom/dt=10V/s;
gate open circuit
1.1
-
2.1
-
3
-
A/ms
VDM = 400 V;
Tj = 125 °C;
IT(RMS) = 4 A;
dVcom/dt = 0.1 V/s;
gate open circuit
4.5
-
8
-
15
-
A/ms
tgt
gate controlled
turn-on time
ITM =20A;
VD =VDRM(max);
IG = 0.1 A;
dIG/dt = 5 A/s
-2
--2
-
-2
-
s
(1) T2
G
(2) T2+ G
(3) T2+ G+
Fig 7.
Normalized gate trigger voltage as a function of
junction temperature
Fig 8.
Normalized gate trigger current as a function of
junction temperature
Tj (°C)
50
150
100
50
0
001aac334
0.8
1.2
1.6
VGT(Tj)
0.4
VGT(25°C)
Tj (°C)
50
150
100
50
0
001aac335
1
2
3
IGT(Tj)
0
(1)
(2)
(3)
IGT(25°C)
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