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參數(shù)資料
| 型號： | BU1706A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 850 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封裝： | PLASTIC, TO-220AB, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BU1706A |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706A
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope
intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
1.5
0.25
MAX.
1750
850
5
8
100
1.0
-
0.6
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
C
B
= 0.3 A
I
CM
= 1.5 A; I
B(on)
= 0.3 A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1750
850
5
8
3
5
100
4
100
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20ms period
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
60
MAX.
1.25
-
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
September 1997
1
Rev 1.000
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PDF描述 |
|---|---|
| BU2506DF | Silicon Diffused Power Transistor |
| BU2506 | Silicon Diffused Power Transistor |
| BU2506DX | Silicon Diffused Power Transistor |
| BU2507AX | Silicon Diffused Power Transistor |
| BU2507DF | Silicon Diffused Power Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BU1706AB | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU1706AX | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
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