參數(shù)資料
型號(hào)： BU2507DX
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Silicon Diffused Power Transistor
中文描述： 8 A, 700 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SOT-399, 3 PIN
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 57K
代理商： BU2507DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507DX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
V
= 7.5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
160
13.5
-
-
-
-
mA
V
V
7.5
700
R
be
V
CEsat
Base-emitter resistance
Collector-emitter saturation voltages I
C
= 4 A; I
B
= 0.8 A
-
45
-
-
5
V
V
BEsat
h
FE
h
FE
V
F
Base-emitter saturation voltage
DC current gain
I
C
= 4 A; I
B
= 0.8 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 4 A; V
CE
= 5 V
I
F
= 4 A
-
-
5
-
-
1.1
-
9
2.0
V
14
7
1.7
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
= 4 A; I
B(end)
= 0.7 A; L
B
= 6
μ
H;
-V
BB
= 4 V
TYP.
68
MAX.
-
UNIT
pF
5.0
0.25
6.0
0.5
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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