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參數(shù)資料
| 型號： | BU2507 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 擴散硅功率晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | BU2507 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2507AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and computer monitors.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
4
0.25
MAX.
1500
700
8
15
45
1.0
5.0
-
0.5
UNIT
V
V
A
A
W
V
V
A
μ
s
T
hs
≤
25 C
I
C
= 4 A; I
B
= 0.95 A
I
= 4 A; I
B
= 0.8 A
f = 16kHz
I
Csat
= 4 A; f = 16kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
8
15
4
6
100
5
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
1
2
3
case
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU2507AF | Silicon Diffused Power Transistor |
| BU2508AF | Silicon Diffused Power Transistor |
| BU2508AF | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS) |
| BU2508AW | Silicon Diffused Power Transistor |
| BU2508AX | Silicon Diffused Power Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2507AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507AX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2507DX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2507FV | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-precision 10bit 4ch/6ch D/A Converters |
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