參數(shù)資料
型號(hào): BU2508AF
廠商: 永盛國(guó)際集團(tuán)
英文描述: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
中文描述: npn型三重?cái)U(kuò)散型平面硅晶體管(彩電產(chǎn)量的橫向應(yīng)用)
文件頁(yè)數(shù): 4/7頁(yè)
文件大?。?/td> 70K
代理商: BU2508AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.10. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.11. Typical turn-off losses.T
= 85C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 16 kHz
0.1
1
10
IC / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
3
4
5
IC/IB=
0.1
1
10
IB / A
VCESAT / V
10
1
0.1
Tj = 25 C
Tj = 125 C
3A
4.5A
6A
IC=2A
0.1
1
10
IC / A
VCESAT / V
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
5
4
3
IC/IB=
0.1
1
10
IB / A
Eoff / uJ
1000
100
10
3.5A
IC = 4.5A
0
1
2
3
4
IB / A
VBESAT / V
1.2
1.1
1
0.9
0.8
0.7
0.6
6A
4.5A
3A
2A
Tj = 25 C
Tj = 125 C
IC=
0.1
1
10
IB / A
ts, tf / us
12
11
10
9
8
7
6
5
4
3
2
1
0
IC =
3.5A
4.5A
tf
ts
September 1997
4
Rev 1.500
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