參數(shù)資料
型號: BU2508AF
廠商: 永盛國際集團
英文描述: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
中文描述: npn型三重擴散型平面硅晶體管(彩電產(chǎn)量的橫向應(yīng)用)
文件頁數(shù): 5/7頁
文件大?。?/td> 70K
代理商: BU2508AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508AF
Fig.13. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted with heatsink compound and
30
±
5 newton force on the centre of
the envelope.
Fig.14. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
hs
)
Fig.15. Forward bias safe operating area. T
hs
= 25C
I Region of permissible DC operation.
II Extension for repetitive pulse operation.
NB: Mounted without heatsink compound and
30
±
5 newton force on the centre of
the envelope.
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
1
10
100
1000
100
10
1
0.1
0.01
tp =
10 us
100 us
1 ms
10 ms
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
Ptot max
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
September 1997
5
Rev 1.500
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