參數(shù)資料
型號(hào): BU52021HFV
元件分類: Magnetic Field Sensor
英文描述: MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, RECTANGULAR, SURFACE MOUNT
封裝: VSOF-5
文件頁數(shù): 4/11頁
文件大?。?/td> 2025K
代理商: BU52021HFV
2/11
Absolute Maximum Ratings
BU52001GUL,BU52021HFV (Ta=25 )
BU52011HFV,BU52015GUL (Ta=25 )
Magnetic and Electrical Characteristics
BU52001GUL (VDD 3.0V Ta 25 )
Specified Values
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Supply voltage
VDD
2.4
3.0
3.3
V
BopS
-
3.7
5.5
Operating point
BopN
-5.5
-3.7
-
mT
BrpS
0.8
2.9
-
Release point
BrpN
-
-2.9
-0.8
mT
Period
Tp
-
50
100
ms
Output high voltage
VOH
VDD
-0.4
-
V
BrpN<B<BrpS
IOUT =-1.0mA
Output low voltage
VOL
-
0.4
V
B<BopN, BopS<B
IOUT =+1.0mA
Supply current
IDD(AVG)
-
8.0
12.0
A
Average values
BU52011HFV (VDD 1.80V Ta 25 )
Specified Values
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Supply voltage
VDD
1.65
1.80
3.30
V
BopS
0
.
5
0
.
3
-
Operating point
BopN
-5.0
-3.0
-
mT
BrpS
-
1
.
2
6
.
0
Release point
BrpN
-
-2.1
-0.6
mT
Period
Tp
-
50
100
ms
Output high voltage
VOH
VDD
-0.2
-
V
BrpN<B<BrpS
IOUT =-0.5mA
Output low voltage
VOL
-
0.2
V
B<BopN, BopS<B
IOUT =+0.5mA
Supply current 1
IDD1(AVG)
-
5.0
8.0
A
VDD=1.8V, Average values
Supply current 2
IDD2(AVG)
-
8.0
12.0
A
VDD=2.7V, Average values
B = Magnetic flux density
1mT=10Gauss
The output is fixed after one period from power ON.
These products are not designed to be resistant to radiation.
Parameter
Symbol
Limits
Unit
Power supply voltage
VDD
-0.1 4.5
V
Output current
IOUT
0.5
mA
Operating temp. range
Topr
-40 85
Storage temp. range
Tstg
-40 125
Parameter
Symbol
Limits
Unit
Power supply voltage
VDD
-0.1 4.5
V
Output current
IOUT
1
mA
Operating temp. range
Topr
-40 85
Storage temp. range
Tstg
-40 125
相關(guān)PDF資料
PDF描述
BU52025G-TR MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, RECTANGULAR, SURFACE MOUNT
BU52021HFV-TR MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, RECTANGULAR, SURFACE MOUNT
BU806AU 8 A, 200 V, NPN, Si, POWER TRANSISTOR
BUL43BBS 2 A, 350 V, NPN, Si, POWER TRANSISTOR
BUL43BBU 2 A, 350 V, NPN, Si, POWER TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU52021HFV-TR 功能描述:工業(yè)霍耳效應(yīng)/磁性傳感器 ULTRA SMALL DETECT SENSOR; 2.4-3.6V RoHS:否 制造商:Honeywell 操作類型: 操作高斯: 工作電源電壓: 電流額定值: 封裝 / 箱體: 輸出下降時(shí)間: 工作點(diǎn)最小值/最大值: 安裝風(fēng)格: 最大工作溫度: 最小工作溫度: 最大輸出電流: 封裝:
BU52025G 制造商:ROHM Semiconductor 功能描述:Hole IC,Bop=+/-3.7mT,CMOSout,SSOP5
BU52025G-TR 功能描述:板機(jī)接口霍耳效應(yīng)/磁性傳感器 2.4-3.6V; +/-3.7mT Bipolar Detection RoHS:否 制造商:Honeywell 類型:Bipolar Hall-Effect Digital Position Sensor 工作電源電壓:3 V to 24 V 電源電流:3.5 mA 最大輸出電流:20 mA 工作點(diǎn)最小值/最大值:5 G, 55 G 最小/最大釋放點(diǎn)(Brp):- 55 G, - 5 G 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23
BU52025G-TR-CUT TAPE 制造商:ROHM 功能描述:Silicon Monolithic Integrated Circuit, Hall Effet Switch
BU52031NVX-TR 制造商:ROHM Semiconductor 功能描述:IC BU52031 SERIES