- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369558 > BUD42D-1 TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA PDF資料下載
參數(shù)資料
| 型號： | BUD42D-1 |
| 英文描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 4A I(C) | TO-251AA |
| 中文描述： | 晶體管|晶體管|叩| 350V五（巴西）總裁| 4A條一（c）|至251AA |
| 文件頁數(shù)： | 9/12頁 |
| 文件大小： | 197K |
| 代理商： | BUD42D-1 |
BUD42D
http://onsemi.com
9
Figure 30. Power Derating
1
0
160
40
20
T
C
, CASE TEMPERATURE (
°
C)
0.6
0.2
P
60
80
100
120
140
0.4
0.8
SECOND BREAKDOWN
DERATING
THERMAL DERATING
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
–V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 28 is
based on T
C
= 25
°
C; T
j(pk)
is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
C
> 25
°
C. Second
Breakdown limitations do not derate like thermal
limitations. Allowable current at the voltages shown on
Figure 28 may be found at any case temperature by using the
appropriate curve on Figure 30.
T
j(pk)
may be calculated from the data in Figure 31. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turn–off with the base to emitter junction reverse biased. The
safe level is specified as reverse biased safe operating area
(Figure 29). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
Figure 31. Thermal Response
1
0.01
1000
100
0.01
t, TIME (ms)
0.1
r
10
1
0.1
R
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 5
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUD43B1 | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-251 |
| BUD43BK | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-251AA |
| BUD43BW | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 2A I(C) | TO-252AA |
| BUD43D2-1 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251AA |
| BUD44D2-1 | TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 2A I(C) | TO-251 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUD42D-1G | 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUD42DG | 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUD42DT4 | 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUD42DT4G | 功能描述:兩極晶體管 - BJT 4A 650V 25W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUD43B | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。