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參數(shù)資料
| 型號(hào)： | BUK454-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor |
| 中文描述： | 41 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大?。?/td> | 51K |
| 代理商： | BUK454-60H |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK454-60H
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 15 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 15 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 20 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
BUK474-60H
VGS / V
ID / A
Tj / C =
-40
25
150
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
10
20
30
40
50
60
70
80
0
5
10
15
20
BUK474-60H
ID / A
gfs / S
Tj / C =
-40
25
150
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-20
20
60
100
140
180
Tj / C
Normalised RDS(ON) = f(Tj)
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
a
0.01
0.1
1
10
100
100
1000
10000
BUK474-60H
VDS / V
C / pF
Ciss
Coss
Crss
August 1996
4
Rev 1.000
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| BUK455-100A | PowerMOS transistor |
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| BUK455-200A | PowerMOS transistor |
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| BUK455-60A | PowerMOS transistor |
相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BUK454-800A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK454-800B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK455 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK455-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor |
| BUK455-100A/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR TO 220 MOSFET N KANAL |
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