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參數(shù)資料
| 型號(hào)： | BUK542-100B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 5.6 A, 100 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 58K |
| 代理商： | BUK542-100B |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK542-100A/B
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 5.5 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
BUK552-100A
VDS / V
20
15
10
5
0
3
4
5
7
10
ID / A
VGS / V =
0
2
4
6
8
10
12
14
16
18
20
BUK 552-100A
ID / A
gfs / S
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
BUK552-100A
ID / A
1.0
0.8
0.6
0.4
0.2
0
3
3.5
4
4.5
5
7
10
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
0
2
4
6
8
BUK552-100A
VGS / V
20
15
10
5
0
ID / A
Tj / C =
25
150
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
2
1
0
max.
typ.
min.
April 1993
4
Rev 1.100
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|---|---|
| BUK542-50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK542-50B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK542-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK542-60B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK543-100A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
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