- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373032 > BUK555-200 (NXP Semiconductors N.V.) PowerMOS transistor Logic level FET PDF資料下載
參數(shù)資料
| 型號： | BUK555-200 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | PowerMOS場效應(yīng)晶體管邏輯電平 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BUK555-200 |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK555-200A/B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
BUK555
-200A
200
14
125
175
0.23
-200B
200
13
125
175
0.28
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
V
A
W
C
V
GS
=
5 V
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
±
V
GSM
Non-repetitive gate-source voltage t
p
≤
50
μ
s
CONDITIONS
-
R
GS
= 20 k
-
MIN.
-
-
-
-
MAX.
200
200
15
20
UNIT
V
V
V
V
-200A
14
10
56
-200B
13
9.2
52
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage temperature
Junction Temperature
T
mb
= 25 C
T
mb
= 100 C
T
mb
= 25 C
T
mb
= 25 C
-
-
-
-
-
-
A
A
A
W
C
C
125
175
175
- 55
-
THERMAL RESISTANCES
SYMBOL
R
th j-mb
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient
CONDITIONS
MIN.
-
TYP.
-
MAX.
1.2
UNIT
K/W
R
th j-a
-
60
-
K/W
1 2 3
tab
d
g
s
April 1993
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK555-200A | PowerMOS transistor Logic level FET |
| BUK555-200B | PowerMOS transistor Logic level FET |
| BUK555-60A | PowerMOS transistor Logic level FET |
| BUK555-60B | PowerMOS transistor Logic level FET |
| BUK555-60H | PowerMOS transistor Logic level FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK555-200A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK555-200B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK555-200B/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR UNIVERSAL MOSFET SOT |
| BUK555-50A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
| BUK555-50B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。