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參數(shù)資料
| 型號： | BUK7624-55A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | N-channel TrenchMOS standard level FET |
| 中文描述： | N溝道TrenchMOS標(biāo)準(zhǔn)電平場效應(yīng)管 |
| 封裝： | BUK7624-55A<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 6/15頁 |
| 文件大小： | 314K |
| 代理商： | BUK7624-55A |
Philips Semiconductors
BUK7524-55A; BUK7624-55A
TrenchMOS standard level FET
Product specification
Rev. 02 — 01 March 2001
6 of 15
9397 750 08029
Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
I
S
= 25 A; V
GS
= 0 V;
Figure 15
I
S
= 20 A;dI
S
/dt =
100 A/
μ
s
V
GS
=
10 V; V
DS
= 30 V
0.85
1.2
V
t
rr
Q
r
49
102
ns
nC
Table 5:
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min
Typ
Max
Unit
T
j
= 25
°
C; t
p
= 300
μ
s
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
T
j
= 25
°
C; I
D
= 25 A
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb71
0
20
40
60
80
100
120
140
160
180
0
2
4
6
8
10
VDS (V)
ID
4.5
5.5
6.5
20
7.5
8.5
9.5
11
18
16
14
12
VGS (V)=
03nb70
10
15
20
25
30
6
8
10
12
14
16
18
VGS (V)
20
RD35
(m
)
03nb72
0
10
20
30
40
50
0
20
40
60
80
100
120
140
ID (A)
RD60
(m
)
VGS (V) =
5.5
6
6.5
7
8
10
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60
-20
20
60
100
140
Tj (oC)
180
a
a
R
DSon 25 C
)
---------------------------
=
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參數(shù)描述 |
|---|---|
| BUK7624-55A /T3 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7624-55A,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK7624-55T/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 45A I(D) | SOT-404 |
| BUK7626-100B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS standard level FET |
| BUK7626-100B /T3 | 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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