參數(shù)資料
型號(hào)： BUK952R8-30B
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（?。﹟ TO - 220AB現(xiàn)有
文件頁(yè)數(shù)： 11/15頁(yè)
文件大?。?/td> 315K
代理商： BUK952R8-30B
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
5 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C75
V
Tj = 55 °C70
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
V
Tj = 55 °C
2.3
V
IDSS
drain-source leakage current
VDS = 75 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±10 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =5V; ID =25A;
Tj =25 °C
7.6
9
m
Tj = 175 °C
18.9
m
VGS = 4.5 V; ID =25A
9.95
m
VGS =10V; ID =25A
7.23
8.5
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
6631
8840
pF
Coss
output capacitance
905
1090
pF
Crss
reverse transfer capacitance
610
840
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =5V; RG =10
47
ns
tr
rise time
185
ns
td(off)
turn-off delay time
424
ns
tf
fall time
226
ns
Ld
internal drain inductance
from drain lead 6 mm from
package to centre of die
4.5
nH
from contact screw on
mounting base to centre of
die SOT78
3.5
nH
from upper edge of drain
mounting base to centre of
die SOT404
2.5
nH
Ls
internal source inductance
from source lead to source
bond pad
7.5
nH
相關(guān)PDF資料
PDF描述
BUK9535-100A TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 41A I(D) | TO-220AB
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK952R8-30B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK952R8-30B127 制造商:NXP Semiconductors 功能描述:N CH MOSFET TRENCH AUTOMOTIVE 30V 34A
BUK952R8-60E 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO-22 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 120A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2200ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.7V; Power ;RoHS Compliant: Yes
BUK952R8-60E,127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 120A 3-Pin TO-220AB Rail 制造商:NXP Semiconductors 功能描述:BUK952R8-60E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220AB
BUK9535-100A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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