參數(shù)資料
型號： BUK952R8-30B
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
中文描述： 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 75A條（?。﹟ TO - 220AB現(xiàn)有
文件頁數(shù)： 12/15頁
文件大?。?/td> 315K
代理商： BUK952R8-30B
Philips Semiconductors
BUK9509-75A; BUK9609-75A
TrenchMOS logic level FET
Product specication
Rev. 02 — 06 November 2000
6 of 15
9397 750 07656
Philips Electronics N.V. 2000. All rights reserved.
Source-drain diode
VSD
source-drain (diode forward)
voltage
IS = 25 A; VGS =0V;
0.85
1.2
V
trr
reverse recovery time
IS =20A; dIS/dt = 100 A/s
VGS = 10 V; VDS =30V
70.3
ns
Qr
recovered charge
213
nC
Table 5:
Characteristics…continued
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Tj =25 °C; tp = 300 sTj =25 °C; ID =25A
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03nb41
0
50
100
150
200
250
300
350
400
02
46
8
10
VDS (V)
ID
(A)
3
4
5
10
8
6
7
2.2
VGS (V) =
03nb40
4
6
8
10
12
14
16
18
20
234
5678
VGS (V)
RDSon
(m
)
03nb42
5
10
15
20
0
50
100
150
200
250
300
350
ID (A)
RDSon
(m
)
VGS (V) = 3
3.2
3.4
3.6
3.8
4
6
03nb25
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
-60
-20
20
60
100
140
180
Tj (
oC)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK952R8-30B,127 功能描述:MOSFET HIGH PERF TRENCHMOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK952R8-30B127 制造商:NXP Semiconductors 功能描述:N CH MOSFET TRENCH AUTOMOTIVE 30V 34A
BUK952R8-60E 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO-22 制造商:NXP Semiconductors 功能描述:MOSFET, N-CH, 60V, 120A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):2200ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs Typ:1.7V; Power ;RoHS Compliant: Yes
BUK952R8-60E,127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 120A 3-Pin TO-220AB Rail 制造商:NXP Semiconductors 功能描述:BUK952R8-60E/SIL3P/RAILH// - Rail/Tube 制造商:NXP Semiconductors 功能描述:MOSFET N-CH 60V 120A TO220AB
BUK9535-100A 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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