參數(shù)資料
型號: BUT18AF
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon diffused power transistors
中文描述: 6 A, 450 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC, ISOLATED TO-220, 3 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 69K
代理商: BUT18AF
1999 Jun 11
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BUT18F; BUT18AF
Note
1.
Measured with a half-sinewave voltage (curve tracer).
h
FE
DC current gain
V
CE
= 5 V; I
C
= 10 mA;
see Fig.9
V
CE
= 5 V; I
C
= 1 A; see Fig.9
10
18
35
10
20
35
Switching times resistive load
(see Figs 10 and 11)
t
on
turn-on time
I
Con
= 4 A;
I
Bon
=
I
Boff
= 800 mA
I
Con
= 4 A;
I
Bon
=
I
Boff
= 800 mA
I
Con
= 4 A;
I
Bon
=
I
Boff
= 800 mA
1
μ
s
t
s
storage time
4
μ
s
t
f
fall time
0.8
μ
s
Switching times inductive load
(see Figs 10 and 13)
t
s
t
f
storage time
fall time
I
Con
= 4 A; I
Bon
= 800 mA
I
Con
= 4 A; I
Bon
= 800 mA
1.6
150
2.5
400
μ
s
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Fig.2 Power derating curve.
handbook, halfpage
0
50
Th (
o
C)
100
150
0
40
80
MGK674
Ptot max
(%)
Fig.3
Test circuit for collector-emitter
sustaining voltage.
handbook, halfpage
MGE252
+
50 V
100 to 200
30 to 60 Hz
L
6 V
oscilloscope
vertical
horizontal
1
300
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