參數(shù)資料
型號(hào): BUT211
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: PLASTIC, TO-220AB, 3 PIN
文件頁(yè)數(shù): 1/7頁(yè)
文件大?。?/td> 70K
代理商: BUT211
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211
GENERAL DESCRIPTION
Enhanced performance, new generation, high speed switching npn transistor in TO220AB envelope specially suited
for high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Inductive fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
-
MAX.
850
400
5
10
100
2.0
0.1
UNIT
V
V
A
A
W
V
μ
s
T
mb
25 C
I
C
B
= 0.4 A
I
Con
= 3.0 A; I
Bon
= 0.3 A
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-65
-
MAX.
850
400
5
10
2
4
100
150
150
UNIT
V
V
A
A
A
A
W
C
C
T
mb
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
-
MAX.
1.25
60
UNIT
K/W
K/W
in free air
1 2 3
tab
b
c
e
March 1996
1
Rev 1.100
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