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參數(shù)資料
| 型號(hào)： | BUT211X |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_DF - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Standard 50.8 x25.4x10.2mm Package- Efficiency to 89% |
| 中文描述： | 5 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 文件頁(yè)數(shù)： | 4/7頁(yè) |
| 文件大小： | 57K |
| 代理商： | BUT211X |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUT211X
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
mb
)
Fig.8. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f(I
C
); parameter I
C
/I
B
Fig.10. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
C
); parameter I
C
/I
B
Fig.11. Typical base-emitter saturation voltage.
V
BEsat
= f(I
B
); parameter I
C
Fig.12. Typical collector-emitter saturation voltage.
V
CEsat
= f(I
B
); parameter I
C
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.1
1
10
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VCEsat / V
IC / A
Tj = 25 C
Tj = 125 C
IC/IB=
12
10
8
1u
100u
10m
1
100
t / s
Zth / (K/W)
10
1
0.1
0.01
0.001
D=0
0.5
0.2
0.1
0.05
0.02
10u
1m
100m
10
D =
tp
T
T
P
D
t
t
p
BU1706AX
0
0.4
0.8
1.2
IB / A
1.6
2
2.4
1.2
1.1
1
0.9
0.8
0.7
0.6
VBEsat / V
Tj = 25 C
Tj = 125 C
IC =
5A
3A
2A
0.1
1
10
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
VBEsat / V
IC / A
Tj = 125 C
Tj = 25 C
IC/IB=
8
10
12
0.1
1
10
10
1
0.1
VCEsat / V
IB / A
Tj = 25 C
Tj = 125 C
IC=2A
3A
5A
March 1996
4
Rev 1.000
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