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參數(shù)資料
| 型號(hào)： | BY229XSERIES |
| 廠商： | GE Security, Inc. |
| 英文描述： | Octal bus buffer with 3 state outputs (non inverted) |
| 中文描述： | 快速交換塑料整流器 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 56K |
| 代理商： | BY229XSERIES |
Philips Semiconductors
Product specification
Rectifier diodes
fast, soft-recovery
BY229F, BY229X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
isol
Peak isolation voltage from
both terminals to external
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
both terminals to external
heatsink
C
isol
Capacitance from pin 1 to
external heatsink
CONDITIONS
SOD100 package; R.H.
≤
65%; clean and
dustfree
MIN.
-
TYP. MAX. UNIT
-
1500
V
-
-
2500
V
sinusoidal waveform; R.H.
≤
65%; clean
and dustfree
f = 1 MHz
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
PARAMETER
R
th j-hs
Thermal resistance junction to
heatsink
R
th j-a
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air.
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
7.2
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
V
F
Forward voltage
I
R
Reverse current
CONDITIONS
I
F
= 20 A
V
R
= V
RWM
; T
j
= 125 C
MIN.
-
-
TYP.
1.5
0.1
MAX.
1.85
0.4
UNIT
V
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
t
rr
Reverse recovery time
Q
s
Reverse recovery charge
dI
R
/dt
Maximum slope of the reverse
recovery current
CONDITIONS
I
F
= 1 A; V
R
> 30 V; -dI
F
/dt = 50 A/
μ
s
I
F
= 2 A; V
R
> 30 V; -dI
F
/dt = 20 A/
μ
s
I
F
= 2 A; -dI
F
/dt = 20 A/
μ
s
MIN.
-
-
-
TYP.
100
0.5
50
MAX.
135
0.7
60
UNIT
ns
μ
C
A/
μ
s
September 1998
2
Rev 1.200
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