參數(shù)資料
型號: BZG142
廠商: NXP Semiconductors N.V.
英文描述: SMA ZenBlock?; zener with integrated blocking diode
中文描述: 形狀記憶合金ZenBlock?;與齊納二極管集成阻塞
文件頁數(shù): 2/8頁
文件大小: 61K
代理商: BZG142
2001 Aug 20
2
Philips Semiconductors
Product specification
SMA ZenBlock
; zener
with integrated blocking diode
BZG142
FEATURES
Zener and 600 V/250 ns blocking diode in one package
Protects the MOSFET in power IC controllers such as
STARPlug
(1)
, TOPSwitch
(2)
and VIPer
(3)
High surge capability
Supports valley switching
Glass passivated junctions
Excellent clamping capability and stability
Supplied in 12 mm embossed tape.
DESCRIPTION
The SMA ZenBlock
is designed to protect the MOSFET
in flyback converters against over-voltages caused by the
transformer leakage inductance. The SMA ZenBlock
combines a zener/TVS with a fast soft-recovery diode in
one package, and can be used to replace double diode,
RC or RCD snubbers.
The BZG142 consists of a glass passivated chip in a
DO-214AC surface mount package.
The well-defined void-free case is of a transfer-moulded
thermo-setting plastic. The small rectangular package has
two J bent leads.
(1) STARPlug is a trademark of Philips.
(2) TOPSwitch is a trademark of Power Integrations.
(3) VIPer is a trademark of STMicroelectronics.
MGU215
Top view
Side view
Fig.1 Simplified outline (DO-214AC) and symbol.
handbook, halfpage
Vo
ZENBLOCK
CONTROL
MLD682
Fig.2 Typical application.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
65
MAX.
UNIT
°
C
°
C
T
stg
T
j
Zener
storage temperature
junction temperature
+175
+175
P
tot
P
ZSM
total power dissipation
non-repetitive peak reverse power
dissipation
T
tp
= 105
°
C; see Fig.3
t
p
= 100
μ
s; square pulse;
T
j
= 25
°
C prior to surge;
see Figs 5 and 6
10/1000
μ
s exponential pulse;
T
j
= 25
°
C prior to surge; see Fig.4
2.8
400
W
W
P
RSM
non-repetitive peak reverse power
dissipation
150
W
Blocking diode
V
R
E
RSM
continuous reverse voltage
non-repetitive peak reverse
avalanche energy
600
7.5
V
mJ
L = 120 mH; T
j
= T
j(max)
prior to
surge; inductive load switched off
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