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參數(shù)資料
| 型號： | BZG142 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | SMA ZenBlock?; zener with integrated blocking diode |
| 中文描述： | 形狀記憶合金ZenBlock？;與齊納二極管集成阻塞 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BZG142 |
2001 Aug 20
3
Philips Semiconductors
Product specification
SMA ZenBlock
; zener
with integrated blocking diode
BZG142
ELECTRICAL CHARACTERISTICS ZENER/TVS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
To complete the type number the suffix is added to the basic type number, e.g. BZG142-68.
Non-repetitive peak reverse current in accordance with “IEC 60060-1, Section 8”(10/1000
μ
s pulse); see Fig.4.
ELECTRICAL CHARACTERISTICS BLOCKING DIODE
T
j
= 25
°
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1.
2.
Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
≥
35
μ
m, see Fig.9.
Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
≥
40
μ
m, see Fig.9.
For more information please refer to the “General Part of associated Handbook”
TYPE
NUMBER
SUFFIX
(1)
WORKING VOLTAGE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
CLAMPING
VOLTAGE
REVERSECURRENT
at STAND-OFF
VOLTAGE
V
Z
(V) at I
test
(see Fig.7)
S
Z
(%/K) at I
test
I
test
(mA)
V
(CL)R
(V)
at I
RSM
(A)
(2)
I
R
(
μ
A)
T
j
= 150
°
C
at V
R
(V)
MIN.
NOM.
MAX.
MIN.
MAX.
MAX.
MAX.
68
91
100
120
150
160
180
200
61
82
90
108
135
144
162
180
68
91
100
120
150
160
180
200
75
100
110
132
165
176
198
220
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.07
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
10
5
5
5
5
5
5
5
97
130
143
171
214
228
258
288
1.54
1.15
1.05
0.88
0.70
0.66
0.58
0.52
100
100
100
100
100
100
100
100
56
75
82
100
120
130
150
160
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
15
MAX.
5
100
UNIT
V
(BR)R
C
ZB
I
R
reverse avalanche breakdown voltage I
R
= 0.1 mA
ZenBlock capacitance
reverse current
700
V
pF
μ
A
μ
A
f = 1 MHz; V
R
= 0; see Fig.8
V
R
= 600 V
V
R
= 600 V; T
j
= 150
°
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
R
th j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
25
100
150
K/W
K/W
K/W
note 1
note 2
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