參數(shù)資料
型號: BZT03
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes(電壓穩(wěn)壓二極管)
中文描述: 7.5 V, 3.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
文件頁數(shù): 2/9頁
文件大小: 46K
代理商: BZT03
1996 Jun 11
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
FEATURES
Glass passivated
High maximum operating
temperature
Low leakage current
Excellent stability
Zener working voltage range:
7.5 to 270 V for 38 types
Transient suppressor stand-off
voltage range:
6.2 to 430 V for 45 types
Available in ammo-pack.
DESCRIPTION
Rugged glass SOD57 package, using
a high temperature alloyed
construction. This package is
hermetically sealed and fatigue free
as coefficients of expansion of all
used parts are matched.
Fig.1 Simplified outline (SOD57) and symbol.
2/3 page (Datasheet)
MAM204
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
total power dissipation
T
tp
= 25
°
C; lead length 10 mm; see Fig.2
T
amb
= 45
°
C; see Fig.2;
PCB mounted (see Fig.6)
3.25
1.30
W
W
P
ZRM
repetitive peak reverse power
dissipation
non-repetitive peak reverse
power dissipation
non-repetitive peak reverse
power dissipation
storage temperature
junction temperature
10
W
P
ZSM
t
p
= 100
μ
s; square pulse;
T
j
= 25
°
C prior to surge; see Fig.3
10/1000
μ
s exponential pulse (see Fig.4);
T
j
= 25
°
C prior to surge
600
W
P
RSM
300
W
T
stg
T
j
65
65
+175
+175
°
C
°
C
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