參數(shù)資料
型號: BZT03
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: Voltage regulator diodes(電壓穩(wěn)壓二極管)
中文描述: 7.5 V, 3.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
文件頁數(shù): 7/9頁
文件大小: 46K
代理商: BZT03
1996 Jun 11
7
Philips Semiconductors
Product specification
Voltage regulator diodes
BZT03 series
GRAPHICAL DATA
Fig.2
Maximum total power dissipation as a
function of temperature.
Solid line: tie-point temperature; lead length = 10 mm.
Dotted line: ambient temperature; PCB mounted as shown in Fig 6.
handbook, halfpage
Ptot
(W)
0
200
3
1
0
2
100
T (
°
C)
MBH534
T
j
= 25
°
C prior to surge.
Fig.3
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
10
2
10
10
2
10
3
4
10
1
1
tp (ms)
PZSM
(W)
10
MBH535
Fig.4
Non-repetitive peak reverse current
pulse definition.
In accordance with “IEC 60-1, Section 8”
t
1
= 10
μ
s.
t
2
= 1000
μ
s.
handbook, halfpage
(%)
MGD521
100
90
50
10
t1
t2
t
T
j
= 25
°
C.
Fig.5
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
2
0
1
2
MBH536
IF
(A)
1
VF (V)
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