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C8051F70x/71x
52
Rev. 1.0
Table 9.9. EEPROM Electrical Characteristics
VDD = 1.8 to 3.6 V; TA = –40 to +85 °C unless otherwise specified. Use factory-calibrated settings.
Parameter
Conditions
Min
Typ
Max
Units
Write to EEPROM from RAM
—
3
ms
Read of EEPROM to RAM
—
50 x TSYSCLK
—s
Endurance (Writes)
300000
—
cycles
Clock Speed During EEPROM
Write Operations
1—
—
MHz
Note: TSYSCLK is equal to one period of the device system clock (SYSCLK).
Table 9.10. ADC0 Electrical Characteristics
VDD = 3.0 V, VREF = 2.40 V (REFSL=0), –40 to +85 °C unless otherwise specified.
Parameter
Conditions
Min
Typ
Max
Units
DC Accuracy
Resolution
10
bits
Integral Nonlinearity
—
±0.5
±1
LSB
Differential Nonlinearity
Guaranteed Monotonic
—
±0.5
±1
LSB
Offset Error
–2
0
2
LSB
Full Scale Error
–2
0
2
LSB
Offset Temperature Coefficient
—
45
—
ppm/°C
Dynamic performance (10 kHz sine-wave single-ended input, 1 dB below Full Scale, 500 ksps)
Signal-to-Noise Plus Distortion
56
60
—
dB
Total Harmonic Distortion
Up to the 5th harmonic
—
72
—
dB
Spurious-Free Dynamic Range
—
–75
—
dB
Conversion Rate
SAR Conversion Clock
—
8.33
MHz
Conversion Time in SAR Clocks
10-bit Mode
8-bit Mode
13
11
—
clocks
Track/Hold Acquisition Time
VDD >= 2.0 V
VDD < 2.0 V
300
2.0
—
ns
s
Throughput Rate
—
500
ksps
Analog Inputs
ADC Input Voltage Range
0
—
VREF
V
Sampling Capacitance
1x Gain
0.5x Gain
—
5
3
—
pF
Input Multiplexer Impedance
—
5
—
k
Power Specifications
Power Supply Current
Operating Mode, 500 ksps
—
600
1000
A
Power Supply Rejection
—
–70
—
dB