參數(shù)資料
型號(hào): CAT24C128YI-GT3
英文描述: 128-Kb I2C CMOS Serial EEPROM
中文描述: 128 - KB的的I2C的CMOS串行EEPROM
文件頁數(shù): 2/18頁
文件大?。?/td> 423K
代理商: CAT24C128YI-GT3
CAT24C128
2
Doc. No. MD-1103, Rev. J
Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
ABSOLUTE MAXIMUM RATINGS
(1)
Storage Temperature
Voltage on Any Pin with Respect to Ground
(2)
-65°C to +150°C
-0.5 V to +6.5 V
RELIABILITY CHARACTERISTICS
(3)
Symbol
N
END(4)
T
DR
Parameter
Endurance
Data Retention
Min
Units
1,000,000
100
Program/ Erase Cycles
Years
D.C. OPERATING CHARACTERISTICS
V
CC
= 1.8 V to 5.5 V, T
A
= -40°C to +125°C, unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Max
Units
I
CCR
I
CCW
Read Current
Write Current
Read, f
SCL
= 400kHz
Write, f
SCL
= 400kHz
1
3
1
2
1
2
mA
mA
I
SB
Standby Current
All I/O Pins at GND or V
CC
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
μ
A
I
L
I/O Pin Leakage
Pin at GND or V
CC
μ
A
V
IL
V
IH
V
OL1
V
OL2
Input Low Voltage
Input High Voltage
Output Low Voltage V
CC
< 2.5 V, I
OL
= 3.0mA
Output Low Voltage V
CC
< 2.5 V, I
OL
= 1.0mA
-0.5
V
CC
x 0.3
V
CC
+ 0.5
0.4
0.2
V
V
V
V
V
CC
x 0.7
PIN IMPEDANCE CHARACTERISTICS
V
CC
= 1.8 V to 5.5 V, T
A
= -40°C to +125°C, unless otherwise specified.
Symbol
Parameter
Conditions
Max
Units
C
IN(3)
SDA I/O Pin Capacitance
V
IN
= 0 V
8
pF
C
IN(3)
I
WP(5)
Input Capacitance (other pins)
V
IN
= 0 V
6
pF
WP Input Current
V
IN
< V
IH
200
μ
A
V
IN
> V
IH
1
μ
A
Note:
(1) Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this speci-
fication is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability.
(2) The DC input voltage on any pin should not be lower than -0.5 V or higher than V
CC
+ 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than -1.5 V or overshoot to no more than V
CC
+ 1.5 V, for periods of less than 20 ns.
(3) These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC-Q100
and JEDEC test methods.
(4) Page Mode, V
CC
= 5 V, 25°C
(5) When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull-down is relatively strong;
therefore the external driver must be able to supply the pull-down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull-down reverts to a weak current source.
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