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參數資料
| 型號： | CAT25128YI-GT2 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | PROM |
| 英文描述： | 16K X 8 SPI BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 4.40 X 3 MM, HALOGEN FREE AND ROHS COMPLIANT, MO-153, TSSOP-8 |
| 文件頁數： | 10/16頁 |
| 文件大小： | 172K |
| 代理商： | CAT25128YI-GT2 |
CAT25128
http://onsemi.com
3
Table 5. A.C. CHARACTERISTICS (TA = 40°C to +85°C (Industrial) and TA = 40°C to +125°C (Extended).) (Notes 4, 7)
Symbol
Parameter
VCC = 1.8 V 5.5 V / 405C to +855C
VCC = 2.5 V 5.5 V / 405C to +1255C
VCC = 2.5 V 5.5 V
405C to +855C
Units
Min
Max
Min
Max
fSCK
Clock Frequency
DC
5
DC
10
MHz
tSU
Data Setup Time
40
20
ns
tH
Data Hold Time
40
20
ns
tWH
SCK High Time
75
40
ns
tWL
SCK Low Time
75
40
ns
tLZ
HOLD to Output Low Z
50
25
ns
Input Rise Time
2
ms
Input Fall Time
2
ms
tHD
HOLD Setup Time
0
ns
tCD
HOLD Hold Time
10
ns
tV
Output Valid from Clock Low
75
40
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
50
20
ns
tHZ
HOLD to Output High Z
100
25
ns
tCS
CS High Time
140
70
ns
tCSS
CS Setup Time
30
15
ns
tCSH
CS Hold Time
30
15
ns
tCNS
CS Inactive Setup Time
20
15
ns
tCNH
CS Inactive Hold Time
20
15
ns
tWPS
WP Setup Time
10
ns
tWPH
WP Hold Time
100
60
ns
Write Cycle Time
5
ms
4. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 50 pF
5. This parameter is tested initially and after a design or process change that affects the parameter.
6. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
7. All Chip Select (CS) timing parameters are defined relative to the positive clock edge (Figure 2). tCSH timing specification is valid
for die revision D and higher. The die revision D is identified by letter “D” or a dedicated marking code on top of the package. For
previous product revision (Rev.C) the tCSH is defined relative to the negative clock edge.
Table 6. POWERUP TIMING (Notes 5, 8)
Symbol
Parameter
Max
Units
tPUR
Powerup to Read Operation
1
ms
tPUW
Powerup to Write Operation
1
ms
8. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
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相關代理商/技術參數 |
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| CAT25128YI-GT3 | 功能描述:電可擦除可編程只讀存儲器 128K SPI Serial CMOS 電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25-130JA | 功能描述:電阻器網絡與陣列 13ohm 5% Concave 8resistors RoHS:否 制造商:Vishay/Thin Film 產品類型:Networks 電路類型:Divider 電阻器數量: 電阻數值:10 kOhms 容差:0.1 % 溫度系數: 管腳數量:3 工作溫度范圍:- 55 C to + 155 C 尺寸:1.02 mm W x 3.05 mm L x 1.4 mm H 引線間隔: 端接類型:SMD/SMT 封裝:Reel |
| CAT25-130JALF | 功能描述:電阻器網絡與陣列 13ohm 5% Concave 8resistors RoHS:否 制造商:Vishay/Thin Film 產品類型:Networks 電路類型:Divider 電阻器數量: 電阻數值:10 kOhms 容差:0.1 % 溫度系數: 管腳數量:3 工作溫度范圍:- 55 C to + 155 C 尺寸:1.02 mm W x 3.05 mm L x 1.4 mm H 引線間隔: 端接類型:SMD/SMT 封裝:Reel |
| CAT25-131JA | 功能描述:電阻器網絡與陣列 130ohm 5% Concave 8resistors RoHS:否 制造商:Vishay/Thin Film 產品類型:Networks 電路類型:Divider 電阻器數量: 電阻數值:10 kOhms 容差:0.1 % 溫度系數: 管腳數量:3 工作溫度范圍:- 55 C to + 155 C 尺寸:1.02 mm W x 3.05 mm L x 1.4 mm H 引線間隔: 端接類型:SMD/SMT 封裝:Reel |
| CAT25-131JALF | 功能描述:電阻器網絡與陣列 130ohm 5% Concave 8resistors RoHS:否 制造商:Vishay/Thin Film 產品類型:Networks 電路類型:Divider 電阻器數量: 電阻數值:10 kOhms 容差:0.1 % 溫度系數: 管腳數量:3 工作溫度范圍:- 55 C to + 155 C 尺寸:1.02 mm W x 3.05 mm L x 1.4 mm H 引線間隔: 端接類型:SMD/SMT 封裝:Reel |
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