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參數(shù)資料
| 型號： | CAT25C256SA-TE13 |
| 元件分類： | EEPROM |
| 英文描述： | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
| 中文描述： | 64K的8K的× 8電池電壓的CMOS E2PROM的 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大小： | 79K |
| 代理商： | CAT25C256SA-TE13 |
8
CAT25C128/256
Doc. No. 25088-00 1/01
Figure 5. RDSR Timing
Byte Write
Once the device is in a Write Enable state, the user may
proceed with a write sequence by setting the
CS
low,
issuing a write instruction via the SI line, followed by the
16-bit address (the most significant bit is don't care for
25C256 and the two most significant bits are don't care
for the 25C128), and then the data to be written. Pro-
gramming will start after the
CS
is brought high. The low
to high transition of the
CS
pin must occur during the
SCK low time, immediately after clocking the least
significant bit of the data. Figure 6 illustrates byte write
sequence.
WRITE Sequence
The CAT25C128/256 powers up in a Write Disable
state. Prior to any write instructions, the WREN instruc-
tion must be sent to CAT25C128/256. The device goes
into Write enable state by pulling the
CS
low and then
clocking the WREN instruction into CAT25C128/256.
The
CS
must be brought high after the WREN instruction
to enable writes to the device. If the write operation is
initiated immediately after the WREN instruction without
CS
being brought high, the data will not be written to the
array because the write enable latch will not have been
properly set. Also, for a successful write operation the
address of the memory location(s) to be programmed
must be outside the protected address field location
selected by the block protection level.
Figure 4. Read Instruction Timing
SK
SI
SO
0
0
0
0
0
0
1
1
BYTE ADDRESS*
0
1
2
3
4
5
6
7
8
9
10
20
21
22
23
24
25
26
27
28
29
30
7
6
5
4
3
2
1
0
*Please check the instruction set table for address
CS
OPCODE
DATA OUT
MSB
HIGH IMPEDANCE
0
1
2
3
4
5
6
7
8
10
9
11
12
13
14
SCK
SI
DATA OUT
MSB
HIGH IMPEDANCE
OPCODE
SO
7
6
5
4
3
2
1
0
CS
0
0
0
0
0
1
0
1
Note: Dashed Line= mode (1, 1) — — — —
Note: Dashed Line= mode (1, 1) — — — —
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| CAT25C256U14A-TE13 | 64K 8K x 8 Battery-Voltage CMOS E2PROM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT25C256X | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256X-1.8 | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256XA | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| CAT25C256XE-TE13 | 制造商:ON Semiconductor 功能描述:EEPROM Serial-SPI 256K-Bit 32K x 8 3.3V/5V 8-Pin SOIC EIAJ T/R |
| CAT25C256XI | 功能描述:電可擦除可編程只讀存儲器 (32kx8) 256K RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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