參數(shù)資料
型號(hào): CAT28C64BPA-12
英文描述: 64K-Bit CMOS PARALLEL E2PROM
中文描述: 64K的位CMOS并行E2PROM的
文件頁(yè)數(shù): 7/12頁(yè)
文件大?。?/td> 57K
代理商: CAT28C64BPA-12
CAT28C64B
7
Doc. No. 25006-0A 2/98 P-1
ADDRESS
CE
OE
WE
tRC
DATA OUT
DATA VALID
DATA VALID
tCE
tOE
tOH
tAA
tOHZ
tHZ
VIH
HIGH-Z
tLZ
tOLZ
Byte Write
A write cycle is executed when both CE and WE are low,
and OE is high. Write cycles can be initiated using either
WE or CE, with the address input being latched on the
falling edge of WE or CE, whichever occurs last. Data,
conversely, is latched on the rising edge of WE or CE,
whichever occurs first. Once initiated, a byte write cycle
automatically erases the addressed byte and the new
data is written within 5 ms.
DEVICE OPERATION
Read
Data stored in the CAT28C64B is transferred to the data
bus when WE is held high, and both OE and CE are held
low. The data bus is set to a high impedance state when
either CE or OE goes high. This 2-line control architec-
ture can be used to eliminate bus contention in a system
environment.
Figure 3. Read Cycle
28C64B F06
Figure 4. Byte Write Cycle [WE Controlled]
ADDRESS
CE
OE
WE
DATA OUT
tAS
DATA IN
DATA VALID
HIGH-Z
tCS
tAH
tCH
tWC
tOEH
tBLC
tDH
tDS
tOES
tWP
5096 FHD F06
相關(guān)PDF資料
PDF描述
CAT28C64BPA-12T 64K-Bit CMOS PARALLEL E2PROM
CAT28C64BPA-15 64K-Bit CMOS PARALLEL E2PROM
CAT28F102 1 Megabit CMOS Flash Memory(1M(64K x 16位)位CMOS閃速存儲(chǔ)器)
CAT28F512 512K-Bit CMOS Flash Memory(512K(64K x 8位)位CMOS閃速存儲(chǔ)器)
CAT28HT256 256K-Bit CMOS Parallel EEPROM(5V,快速,低功耗,256K位(32K x 8位)并行CMOS EEPROM)
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