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參數(shù)資料
| 型號： | CAT28F512 |
| 英文描述： | 512K-Bit CMOS Flash Memory(512K(64K x 8位）位CMOS閃速存儲器) |
| 中文描述： | 為512k位CMOS閃存（為512k（64K的× 8位）位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 1/14頁 |
| 文件大?。?/td> | 97K |
| 代理商： | CAT28F512 |
1
I/O0–I/O7
I/O BUFFERS
CE, OE LOGIC
SENSE
AMP
DATA
LATCH
ERASE VOLTAGE
SWITCH
PROGRAM VOLTAGE
SWITCH
COMMAND
REGISTER
CE
OE
WE
VOLTAGE VERIFY
SWITCH
A
Y-DECODER
X-DECODER
Y-GATING
524,288 BIT
MEMORY
ARRAY
A0–A15
28F512 F02
CAT28F512
512K-Bit CMOS Flash Memory
BLOCK DIAGRAM
DESCRIPTION
The CAT28F512 is a high speed 64K x 8-bit electrically
erasable and reprogrammable Flash memory ideally
suited for applications requiring in-system or after-sale
code updates. Electrical erasure of the full memory
contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard
EPROM and E
2
PROM devices. Programming and
Erase are performed through an operation and verify
algorithm. The instructions are input via the I/O bus,
using a two write cycle scheme. Address and Data are
latched to free the I/O bus and address bus during the
write operation.
The CAT28F512 is manufactured using Catalyst’s ad-
vanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 32-pin plastic DIP, 32-pin PLCC or 32-pin
TSOP packages.
FEATURES
I
Fast Read Access Time: 90/120/150 ns
I
Low Power CMOS Dissipation:
–Active: 30 mA max (CMOS/TTL levels)
–Standby: 1 mA max (TTL levels)
–Standby: 100
μ
A max (CMOS levels)
I
High Speed Programming:
–10
μ
s per byte
–1 Sec Typ Chip Program
I
12.0V
±
5% Programming and Erase Voltage
I
Electronic Signature
I
Commercial, Industrial and Automotive
Temperature Ranges
I
Stop Timer for Program/Erase
I
On-Chip Address and Data Latches
I
JEDEC Standard Pinouts:
–32-pin DIP
–32-pin PLCC
–32-pin TSOP ( 8 x 20)
I
100,000 Program/Erase Cycles
I
10 Year Data Retention
Licensed Intel
second source
1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
Doc. No. 25042-00 2/98 F-1
相關(guān)PDF資料 |
PDF描述 |
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| CAT28HT256 | 256K-Bit CMOS Parallel EEPROM(5V,快速，低功耗，256K位（32K x 8位）并行CMOS EEPROM) |
| CAT28HT64 | 64K-Bit CMOS Parallel EEPROM(5V,快速，低功耗，64K位（8K x 8位）并行CMOS EEPROM) |
| CAT28LV256PE-20T | 256K-Bit CMOS PARALLEL E2PROM |
| CAT28LV256PE-25T | 256K-Bit CMOS PARALLEL E2PROM |
| CAT28LV256PE-30T | 256K-Bit CMOS PARALLEL E2PROM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512G12 | 功能描述:閃存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F512G-12T | 功能描述:閃存 512K-Bit CMOS 閃存 Memory RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G90 | 功能描述:閃存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-90 | 制造商:ON Semiconductor 功能描述:IC FLASH 512KBIT 90NS LCC-32 |
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