Table 4. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unle" />
參數(shù)資料
型號(hào)： CAT5251WI-00-T1
廠商： ON Semiconductor
文件頁數(shù)： 11/15頁
文件大?。?/td> 0K
描述： IC POT DPP 100K 256TAP 24SOIC
標(biāo)準(zhǔn)包裝： 1,000
系列： DPP
接片： 256
電阻（歐姆）： 100k
電路數(shù)： 4
溫度系數(shù)： 標(biāo)準(zhǔn)值 300 ppm/°C
存儲(chǔ)器類型： 非易失
接口： 6 線 SPI（芯片選擇，設(shè)備位址）
電源電壓： 2.5 V ~ 6 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 24-SOIC（0.295"，7.50mm 寬）
供應(yīng)商設(shè)備封裝： 24-SOIC
包裝： 帶卷 (TR)
CAT5251
http://onsemi.com
5
Table 4. POTENTIOMETER CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
RPOT
Potentiometer Resistance (00)
100
kW
RPOT
Potentiometer Resistance (50)
50
kW
Potentiometer Resistance Tolerance
20
%
RPOT Matching
1
%
Power Rating
25C, each pot
50
mW
IW
Wiper Current
3
mA
RW
Wiper Resistance
IW = 3 mA @ VCC = 3 V
200
300
W
IW = 3 mA @ VCC = 5 V
100
150
W
VTERM
Voltage on any RH or RL Pin
VSS = 0 V
GND
VCC
V
VN
Noise
(Note 3)
nV/Hz
Resolution
0.4
%
Absolute Linearity (Note 4)
RW(n)(actual) R(n)(expected)
(Note 7)
1
LSB
(Note 6)
Relative Linearity (Note 5)
RW(n+1) [RW(n)+LSB]
(Note 7)
0.5
LSB
(Note 6)
TCRPOT
Temperature Coefficient of RPOT
(Note 3)
300
ppm/C
TCRATIO
Ratiometric Temp. Coefficient
(Note 3)
20
ppm/C
CH/CL/CW
Potentiometer Capacitances
(Note 3)
10/10/25
pF
fc
Frequency Response
RPOT = 50 kW (Note 3)
0.4
MHz
3. This parameter is tested initially and after a design or process change that affects the parameter.
4. Absolute linearity is utilized to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
potentiometer.
5. Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a potentiometer.
It is a measure of the error in step size.
6. LSB = RTOT / 255 or (RH RL) / 255, single pot
7. n = 0, 1, 2, ..., 255.
Table 5. D.C. OPERATING CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
ICC1
Power Supply Current
fSCK = 2.5 MHz, SO Open
VCC = 6 V Inputs = GND
1
mA
ICC2
Power Supply Current
Non-volatile Write
fSCK = 2.5 MHz, SO = Open
VCC = 6 V Inputs = GND
5
mA
ISB
Standby Current (VCC = 5.0 V)
VIN = GND or VCC; SO Open
1
mA
ILI
Input Leakage Current
VIN = GND to VCC
10
mA
ILO
Output Leakage Current
VOUT = GND to VCC
10
mA
VIL
Input Low Voltage
1
VCC x 0.3
V
VIH
Input High Voltage
VCC x 0.7
VCC + 1.0
V
VOL1
Output Low Voltage (VCC = 3 V)
IOL = 3 mA
0.4
V
VOH1
Output High Voltage (VCC = 6 V)
IOH = 1.6 mA
VCC 0.8
V
Table 6. PIN CAPACITANCE (Note 8)
(Applicable over recommended operating range from TA = 25C, f = 1.0 MHz, VCC = +5.0 V (unless otherwise noted).)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
COUT
Output Capacitance (SO)
VOUT = 0 V
8
pF
CIN
Input Capacitance (CS, SCK, SI, WP, HOLD, A0, A1
VIN = 0 V
6
pF
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