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參數(shù)資料
| 型號： | CAT5251WI-00-T1 |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 12/15頁 |
| 文件大小： | 0K |
| 描述： | IC POT DPP 100K 256TAP 24SOIC |
| 標準包裝： | 1,000 |
| 系列： | DPP |
| 接片： | 256 |
| 電阻（歐姆）： | 100k |
| 電路數(shù)： | 4 |
| 溫度系數(shù)： | 標準值 300 ppm/°C |
| 存儲器類型： | 非易失 |
| 接口： | 6 線 SPI（芯片選擇，設備位址） |
| 電源電壓： | 2.5 V ~ 6 V |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 24-SOIC（0.295"，7.50mm 寬） |
| 供應商設備封裝： | 24-SOIC |
| 包裝： | 帶卷 (TR) |
CAT5251
http://onsemi.com
6
Table 7. A.C. CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
tSU
Data Setup Time
CL = 50 pF
50
ns
tH
Data Hold Time
50
ns
tWH
SCK High Time
125
ns
tWL
SCK Low Time
125
ns
fSCK
Clock Frequency
DC
3
MHz
tLZ
HOLD to Output Low Z
50
ns
Input Rise Time
2
ms
Input Fall Time
2
ms
tHD
HOLD Setup Time
100
ns
tCD
HOLD Hold Time
100
ns
tV
Output Valid from Clock Low
200
ns
tHO
Output Hold Time
0
ns
tDIS
Output Disable Time
250
ns
tHZ
HOLD to Output High Z
100
ns
tCS
CS High Time
250
ns
tCSS
CS Setup Time
250
ns
tCSH
CS Hold Time
250
ns
Table 8. POWER UP TIMING (Notes 8, 9) (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Min
Typ
Max
Units
tPUR
Power-up to Read Operation
1
ms
tPUW
Power-up to Write Operation
1
ms
8. This parameter is tested initially and after a design or process change that affects the parameter.
9. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
Table 9. WIPER TIMING
Symbol
Parameter
Min
Max
Units
tWRPO
Wiper Response Time After Power Supply Stable
5
10
ms
tWRL
Wiper Response Time After Instruction Issued
5
10
ms
Table 10. WRITE CYCLE LIMITS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Min
Typ
Max
Units
tWR
Write Cycle Time
5
ms
Table 11. RELIABILITY CHARACTERISTICS (Over recommended operating conditions unless otherwise stated.)
Symbol
Parameter
Reference Test Method
Min
Typ
Max
Units
Endurance
MILSTD883, Test Method 1033
1,000,000
Cycles/Byte
Data Retention
MILSTD883, Test Method 1008
100
Years
ESD Susceptibility
MILSTD883, Test Method 3015
2000
V
Latch-Up
JEDEC Standard 17
100
mA
10.This parameter is tested initially and after a design or process change that affects the parameter.
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