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參數(shù)資料
| 型號(hào)： | CB-C8VM |
| 廠商： | NEC Corp. |
| 英文描述： | Cell-Based CMOS ASIC(CMOS 特殊集成電路) |
| 中文描述： | 細(xì)胞的CMOS集成電路的CMOS（特殊集成電路） |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | CB-C8VM |
CB-C8VX/VM Series Features
0.5-micron (drawn), Ti-Silicide CMOS technology
True 3.3 V process
36 base sizes, each with 2- and 3-metal layer options
Usable gates from 14K to 703K gates
True 5 V CMOS interface by multi-oxide I/O structure
Staggered pad ring for high gate-to-pad ratio
5 V and 3.3 V PCI buffer, including 66-MHz PCI
GTL and HSTL buffer in development
Low power dissipation: 1.04 mW/MHz/gate (3.3 V)
Extensive macro range (CPUs, peripherals, analog)
Memory compiler for various types of memory blocks
Extensive package support: PQFP, TQFP, BGA, TBGA
Automatic clock skew control by clock tree synthesis
OpenCAD: popular, third-party CAE tools supported
NEC Electronics Inc.
Preliminary
CB-C8VX/VM
3-Volt, 0.5-Micron
Cell-Based CMOS ASIC
Description
NEC's CB-C8VX/VM CMOS cell-based ASIC family
facilitates the design of complete cell-based silicon
systems composed of user-defined logic, complex
macrofunctions such as microprocessors, intelligent
peripherals, analog functions, and compiled memory
blocks.
The CB-C8VX cell-based ASIC series employs a
0.5-micron (0.35-micron effective) silicon gate CMOS
process with silicidation. This advanced process greatly
reduces the number of contacts per cell, leading to area-
efficient library elements optimized on speed with a 3.3-
volt power supply. CB-C8VM, a derivative of CB-C8VX,
features a unique I/O structure that provides a full 5-volt
CMOS interface. For both technologies, the Titanium-
Silicide process results in overall reduced power
consumption per cell. Combining very high integration,
high speed, and low power consumption, this technology
meets today's rigorous application demands.
Fully supported by NEC's sophisticated OpenCAD
design framework, CB-C8VX/VM maximizes design
quality and flexibility while minimizing ASIC design
time. NEC's OpenCAD system combines popular
third-party design tools with proprietary NEC tools,
including advanced floorplanner and clock tree
synthesis tools.
A10985EU1V0DS00
April 1996
Table 1. CB-C8VX/VM Series Features and Benefits
CB-C8VX/VM Series Benefits
High-density cell structure
High speed at low power supply
Flexible base sizes to best fit design needs
High integration capabilities
Supports flexible interfacing to different signal voltages
Minimizes device cost for high I/O requirement
Full PCI support compliant with latest PCI specification
High-speed I/F to memory and processor buses
Ideally-suited for hand-held applications
Advanced system-on-silicon capabilities
Area-effective memory integration on chip
Delivers the latest package requirements
Minimizes on-chip clock skew
Smooth design flow from customer design to silicon
Figure 1. BGA Package Examples
OpenCAD is a registered trademark of NEC Electronics Inc.
Full 5-Volt CMOS Interface
CB-C8VM offers a full voltage swing interface to a 5-volt
CMOS signal environment. This option is realized by
implementing a section of thicker gate oxide into the I/O
buffer to guarantee the necessary breakdown voltages.
The 5-volt I/O buffers can be placed at any location of the
I/O area and are freely mixable with 3.3-volt buffers. The
internal core is identical to CB-C8VX.
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