參數(shù)資料
型號(hào): CB-C8VX
廠(chǎng)商: NEC Corp.
英文描述: Cell-Based CMOS ASIC(CMOS 特殊集成電路)
中文描述: 細(xì)胞的CMOS集成電路的CMOS(特殊集成電路)
文件頁(yè)數(shù): 6/8頁(yè)
文件大?。?/td> 41K
代理商: CB-C8VX
CB-C8VX/VM
6
DC Characteristics
(V
DD
= 3.3 V ± 0.3 V, 5 V ± 0.5 V; T
A
= –40 to +125°C)
Parameters
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Static current consumption
I
L
V
I
= V
DD
or GND
B18 to H33
200
μA
H72 to K90
300
μA
Off-state output current
I
OZ
I
OS
I
I
V
O
= V
DD
or GND
V
O
= 0V
±10
μA
Output short-circuit current
–250
mA
Input leakage current
Normal input
V
I
= V
DD
or GND
V
I
= GND
V
I
= GND
V
I
= V
DD
±10
-5
±10
μA
With pull-up resistor (50 ky)
–10
–40
–80
μA
With pull-up resistor (5 ky)
–130
–350
–640
μA
With pull-down resistor (50 ky)
10
65
130
μA
Low-level output current
I
OL
3 V interface buffer
V
OL
= 0.4V
mA
3 mA
I
OL
I
OL
I
OL
I
OL
I
OL
I
OL
3
mA
6 mA
6
mA
9 mA
9
mA
12 mA
12
mA
18 mA
18
mA
24 mA
24
mA
5 V-tolerant buffer
V
OL
= 0.4V
mA
1 mA
I
OL
I
OL
I
OL
I
OL
I
OL
1
mA
2 mA
2
mA
3 mA
3
mA
6 mA
6
mA
9 mA
9
mA
5 V swing buffer
V
OL
= 0.4V
mA
1 mA
I
OL
I
OL
I
OL
I
OL
I
OL
I
OL
I
OL
I
OH
1
mA
2 mA
2
mA
3 mA
3
mA
6 mA
6
mA
9 mA
9
mA
12 mA
12
mA
18 mA
18
mA
High-level output current
3 V interface buffer
V
OH
= 2.4V
3 mA
I
OH
I
OH
I
OH
I
OH
I
OH
I
OH
-3
mA
6 mA
-6
mA
9 mA
-9
mA
12 mA
-12
mA
18 mA
-18
mA
24 mA
-24
mA
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