參數(shù)資料
型號(hào): CBTU4411EE
廠商: NXP Semiconductors N.V.
元件分類: 開關(guān)
英文描述: 11-bit DDR2 SDRAM MUX-bus switch with 12 Ohm ON resistance
封裝: CBTU4411EE<SOT856-1 (LFBGA72)|<<http://www.nxp.com/packages/SOT856-1.html<1<Always Pb-free,;CBTU4411EE<SOT856-1 (LFBGA72)|<<http://www.nxp.com/packages/SOT856-1.html<1
文件頁數(shù): 2/20頁
文件大小: 107K
代理商: CBTU4411EE
CBTU4411_3
NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 12 October 2009
10 of 20
NXP Semiconductors
CBTU4411
11-bit DDR2 SDRAM MUX/bus switch with 12
ON resistance
10. Dynamic characteristics
[1]
This parameter is not production tested.
[2]
Skew is not production tested.
[3]
Difference of rising edge propagation delay to falling edge propagation delay.
Fig 6.
Pull-down resistance versus voltage
350
425
400
375
450
RPD
(
)
VDIMM Vbias (V)
0
0.8
0.6
0.2
0.4
002aae863
Table 9.
Dynamic characteristics
VDD = 1.8 V ± 0.1 V.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
tPD
propagation delay
from HPn or xDPn to xDPn or
50
100
ps
tPZH
driver enable delay to HIGH level
from Sn to HPn or xDPn
0.75
-
1.75
ns
tPZL
driver enable delay to LOW level
from Sn to HPn or xDPn
0.75
-
1.75
ns
tPHZ
driver disable delay from HIGH level from Sn to HPn or xDPn
0.75
-
1.75
ns
tPLZ
driver disable delay from LOW level
from Sn to HPn or xDPn
0.75
-
1.75
ns
tsk(o)
output skew time
from any output to any output;
2530ps
tsk(edge)
edge skew time
2530ps
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CBTU4411EE,557 功能描述:數(shù)字總線開關(guān) IC 10BIT DDR SDRAM MUX RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:24 傳播延遲時(shí)間:0.25 ns 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:TSSOP-56 封裝:Reel
CBTU4411EE-S 功能描述:數(shù)字總線開關(guān) IC 10BIT DDR SDRAM MUX BUS SWITCH RoHS:否 制造商:Texas Instruments 開關(guān)數(shù)量:24 傳播延遲時(shí)間:0.25 ns 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 封裝 / 箱體:TSSOP-56 封裝:Reel
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