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CD1408-R1200~R11000 – Surface Mount Rectifier Diode
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Features
■
Lead free device (RoHS compliant*)
■
Low profile
■
Low power loss, high efficiency
■
UL 94V-0 classification
Applications
■
High frequency switching power supplies
■
Inverters
■
Free wheeling
■
Polarity protection
General Information
The markets of portable communications, computing and video equipment are
challenging the semiconductor industry to develop increasingly smaller electronic
components. Bourns offers Rectifier Diodes for rectification applications, in compact
chip package 1408 size format (compatible with SOD87, SOD123 formats), which
offers PCB real estate savings and are considerably smaller than most competitive
parts. The Glass Passivated Rectifier Diodes offer a forward current of 1 A with a
choice of repetitive peak reverse voltage of 200 V up to 1000 V.
Bourns
Chip Diodes conform to JEDEC standards, are easy to handle on standard
pick and place equipment and their flat configuration minimizes roll away.
*RHSCOMPIAN
Tin Plated
Connectors
FRP Substrate
and Epoxy
Underfill
Electrical Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Thermal Characteristics (@ TA= 25 °C Unless Otherwise Noted)
Parameter
Symbol
CD1408-
R1600
600
Unit
R1200
200
R1400
400
R1800
800
R11000
1000
Maximum Repetitive Peak Reverse Voltage
VRRM
VRMS
VDC
I(AV)
V
Maximum RMS Voltage
140
280
420
560
700
V
Maximum DC Blocking Voltage
200
400
600
800
1000
V
Max. Average Forward Rectified Current
1
1.0
A
DC Reverse Current @ Rated DC Blocking Voltage
(@Ta= 25 °C)
DC Reverse Current @ Rated DC Blocking Voltage
(@Ta= 125 °C)
DC Reverse Current @ Rated DC Blocking Voltage
(@Ta= 150 °C)
IR
1.0
μ
A
IR
30.0
μ
A
IR
50.0
μ
A
Typical Junction Capacitance
2
CJ
VF
Trr
12
pF
Instantaneous Forward Voltage @ IF= 1 A
Maximum Reverse Recovery Time
3
1.0
V
3000
ns
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
(JEDEC Method)
IFSM
30.0
A
Notes:
1 See Forward Derating Curve.
2 Measured @ 1.0 MHz and applied reverse voltage of 4.0 VDC.
3 Reverse recovery test condition: IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
Parameter
Symbol
CD1408-R1200~R11000
Unit
Operating Temperature Range
T
J
-65 to +175
°C
Storage Temperature Range
T
STG
-65 to +175
°C