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參數(shù)資料
型號： CDCR83DBQRG4
廠商： Texas Instruments
文件頁數(shù)： 13/16頁
文件大?。?/td> 0K
描述： IC DIRECT RAMBUS CLK GEN 24-QSOP
標準包裝： 2,500
類型： 時鐘/頻率發(fā)生器，多路復用器
PLL： 是
主要目的： 存儲器，RDRAM
輸入： TTL
輸出： 時鐘
電路數(shù)： 1
比率 - 輸入:輸出： 1:1
差分 - 輸入:輸出： 無/是
頻率 - 最大： 400MHz
電源電壓： 3.135 V ~ 3.465 V
工作溫度： -40°C ~ 85°C
安裝類型： 表面貼裝
封裝/外殼： 24-SSOP（0.154"，3.90mm 寬）
供應商設備封裝： 24-SSOP/QSOP
包裝： 帶卷 (TR)
CDCR83
DIRECT RAMBUS CLOCK GENERATOR
SCAS632B APRIL 2001 REVISED OCTOBER 2005
6
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
electrical characteristics over recommended operating free-air temperature range (unless
otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
VO(STOP)
Output voltage during CLK Stop
(STOPB = 0)
See Figure 1
1.1
2
VO(X)
Output crossing-point voltage
See Figure 1 and Figure 6
1.3
1.8
V
VO
Output voltage swing
See Figure 1
0.4
0.6
V
VIK
Input clamp voltage
VDD = 3.135 V,
II = 18 mA
1.2
V
See Figure 1
2
VOH
High-level output voltage
VDD = min to max,
IOH = 1 mA
VDD 0.1 V
V
VOH
High-level output voltage
VDD = 3.135 V,
IOH = 16 mA
2.4
V
See Figure 1
1
VOL
Low-level output voltage
VDD = min to max,
IOL = 1 mA
0.1
V
VOL
Low-level output voltage
VDD = 3.135 V,
IOL = 16 mA
0.5
V
VDD = 3.135 V,
VO = 1 V
32
52
IOH
High-level output current
VDD = 3.3 V,
VO = 1.65 V
51
mA
IOH
High-level output current
VDD = 3.465 V,
VO = 3.135 V
14.5
21
mA
VDD = 3.135 V,
VO = 1.95 V
43
61.5
IOL
Low-level output current
VDD = 3.3 V,
VO = 1.65 V
65
mA
IOL
Low-level output current
VDD = 3.465 V,
VO = 0.4 V
25.5
36
mA
IOZ
High-impedance-state output
current
S0 = 0,
S1 = 1
±10
A
IOZ(STOP)
High-impedance-state output
current during CLK stop
Stop = 0, VO = GND or VDD
±100
A
IOZ(PD)
High-impedance-state output
current in power-down state
PWRDNB = 0,
VO = GND or VDD
10
100
A
IIH
High-level
REFCLK, PCLKM,
SYNCLKN, STOPB
VDD = 3.465 V,
VI = VDD
10
A
IIH
High-level
input current
PWRDNB, S0, S1,
S2, MULT0, MULT1
VDD = 3.465 V,
VI = VDD
10
A
IIL
Low-level
REFCLK, PCLKM,
SYNCLKN, STOPB
VDD = 3.465 V,
VI = 0
10
A
IIL
Low-level
input current
PWRDNB, S0, S1,
S2, MULT0, MULT1
VDD = 3.465 V,
VI = 0
10
A
ZO
Output
High state
RI at IO 14.5 mA to 16.5 mA
15
35
50
ZO
Output
impedance
Low state
RI at IO 14.5 mA to 16.5 mA
11
17
35
Reference
VDDIR, VDDIPD
VDD = 3.465 V
PWRDNB = 0
50
A
Reference
current
VDDIR, VDDIPD
VDD = 3.465 V
PWRDNB = 1
0.5
mA
CI
Input capacitance
VI = VDD or GND
2
pF
CO
Output capacitance
VO = VDD or GND
3
pF
IDD(PD)
Supply current in power-down state
REFCLK = 0 MHz to 100 MHz,
PWDNB = 0,
STOPB = 1
100
A
IDD(CLKSTOP) Supply current in CLK stop state
BUSCLK configured for 400 MHz
30
mA
IDD(NORMAL)
Supply current in normal state
BUSCLK = 400 MHz
70
mA
VDD refers to any of the following; VDD, VDDIPD, VDDIR, VDDO, VDDC, and VDDP
All typical values are at VDD = 3.3 V, TA = 25°C.
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