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參數(shù)資料
| 型號： | cgb 190 |
| 廠商： | SIEMENS AG |
| 英文描述： | GaAs HBT(GaAs 場效應(yīng)管) |
| 中文描述： | 砷化鎵異質(zhì)結(jié)雙極晶體管（砷化鎵場效應(yīng)管） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 40K |
| 代理商： | CGB 190 |
CGB 190
Data Book
2
03.00
Functional Block Diagram
Figure 1
Block Diagram
VCON:
When this voltage is 2.8 V (
I
con
= 20 mA), all circuits are in normal
operation-mode.
When
V
con
= low, all circuits are shut off.
A digital CMOS- signal is used to set the PA quiescent current in high
mode (
I
Q
= 120 mA) and in low mode (
I
Q
= 60 mA).
High mode should be used for best linearitiy.
Low mode should be used for best efficiency in low power CDMA/TDMA
operation.
VMODE:
Pin Configuration
Pin #
Symbol
Configuration
1
VC2
Power supply for second stage and final interstage tuning
2
VC2
Power supply for second stage and final interstage tuning
3
RF IN
RF IN
4
GND1
Ground for first stage
5
VC1
Power supply for first stage and first interstage tuning
6
Vcon
Power down control
7
mode
High/Low power operation
EHT08537
C1
V
RF IN
V
C2
Circuit
Control
V
MODE
V
RF OUT
CON
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