參數(shù)資料
型號(hào): cgb 190
廠商: SIEMENS AG
英文描述: GaAs HBT(GaAs 場(chǎng)效應(yīng)管)
中文描述: 砷化鎵異質(zhì)結(jié)雙極晶體管(砷化鎵場(chǎng)效應(yīng)管)
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 40K
代理商: CGB 190
CGB 190
Data Book
4
03.00
Digital Mode PCS CDMA
CDMA output
power
P
out
28.5
dBm
Gain
G
28
dB
P
out
= 29 dBm
Offset =
±
1.25 MHz
Offset =
±
2.25 MHz
P
out
= 28.5 dBm
P
out
= 28.5 dBm
Adj. channel power
rejection
ACPR
ALPR
– 45
– 57
dBc
Efficiency
PAE
35
%
Digital Mode WCDMA
CDMA output
power
P
out
27
dBm
Gain
G
28
dB
P
out
= 27 dBm
P
out
= 27 dBm
Adj. channel power
rejection
ACPR
ALPR
– 38
– 45
dBc
Efficiency
PAE
33
%
P
out
= 27 dBm
Power Supply
Power supply
voltage
V
CC
3.2
3.7
4.2
V
Reference voltage
V
ref
I
q
3
V
Idle current
120
60
mA
Vmode = high
Vmode = low
Turn On/Off time
t
on
/
t
off
I
pd
T
case
5
μ
s
μ
A
Power down current
10
Case operating
temperature
– 30
+ 95
C
Electrical Characteristics
(cont’d)
(
T
A
= 25
°
C,
Z
S
=
Z
L
= 50
,
V
c
= 3.7 V,
V
ref
= 2.8 V,
V
mode
= 2.5 V,
unless otherwise specified)
Characteristics
Symbol
Limit Values
Unit
Test Conditions
min.
typ.
max.
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